An integrated gate commutated thyristor (IGCT) is a gate-controlled turn-off switch, which performs similar to a thyristor with lowest conduction losses. IGCT is a power semiconductor, which can be used for medium to high-voltage applications ranging from 0.5 MVA up to several 100 MVA. IGCT enables a robust series connection between high power turn-off devices used for high power applications.
Low conduction loss as compared to GTO and IGBT, increased usage of power electronics in renewable energy sources, better performance at high temperature, and low price are the factors that drive the market. In addition, use of power semiconductor devices in hybrid vehicles and invention of high-power technology (HPT) platform boost the growth of the IGCT market. However, bulky structure of thyristor and complex manufacturing process restricts the growth of the market.
The Integrated Gate Commutated Thyristor (IGCT) market was valued at xx Million US$ in 2020 and is projected to reach xx Million US$ by 2026, at a CAGR of xx% during the forecast period. In this study, 2021 has been considered as the base year and 2021 to 2026 as the forecast period to estimate the market size for Integrated Gate Commutated Thyristor (IGCT).
This report covers the present status and the future prospects of the global Integrated Gate Commutated Thyristor (IGCT) market for 2015-2026.
The report offers detailed coverage of Integrated Gate Commutated Thyristor (IGCT) industry and main market trends. The market research includes historical and forecast market data, demand, application details, price trends, and company shares of the leading Integrated Gate Commutated Thyristor (IGCT) by geography. The report splits the market size, by volume and value, on the basis of application type and geography.
And in this report, we analyze global market from 5 geographies: Asia-Pacific[China, Southeast Asia, India, Japan, Korea, Western Asia], Europe[Germany, UK, France, Italy, Russia, Spain, Netherlands, Turkey, Switzerland], North America[United States, Canada, Mexico], Middle East & Africa[GCC, North Africa, South Africa], South America[Brazil, Argentina, Columbia, Chile, Peru].
Key Companies
ABB, Infineon Technologies, Mitsubishi Electric, Tianjin Century Electronics, CSR Zhuzhou Institute Co, Ltd. (CRRC), General Electric, Xiamen Hidins Technology Co. Ltd., Jiangyin City Saiying Electron Co. Ltd., AmePower, Shenzhen CTW Semiconductor Co.
Market Segment as follows:
Market by Order Type
Asymmetric IGCT
Reverse Blocking IGCT
Reverse Conducting IGCT
Integrated Gate Commutated Thyristor (IGCT) Breakdown Data by Application
Drive
Traction
Converter
Others
Integrated Gate Commutated Thyristor (IGCT) market while maintaining their competitive edge over their competitors. The report offers detailed and crucial information to understand the overall market scenario.
By Region
Asia-Pacific[China, Southeast Asia, India, Japan, Korea, Western Asia]
Europe[Germany, UK, France, Italy, Russia, Spain, Netherlands, Turkey, Switzerland]
North America[United States, Canada, Mexico]
Middle East & Africa[GCC, North Africa, South Africa]
South America[Brazil, Argentina, Columbia, Chile, Peru]
The research provides answers to the following key questions:
• What is the estimated growth rate and market share and size of the Integrated Gate Commutated Thyristor (IGCT) market for the forecast period 2021 - 2026?
• What are the driving forces in the Integrated Gate Commutated Thyristor (IGCT) market for the forecast period 2021 - 2026?
• Who are the prominent market players and how have they gained a competitive edge over other competitors?
• What are the market trends influencing the progress of the Integrated Gate Commutated Thyristor (IGCT) industry worldwide?
• What are the major challenges and threats restricting the progress of the industry?
• What opportunities does the market hold for the prominent market players?
Note – In order to provide more accurate market forecast, all our reports will be updated before delivery by considering the impact of COVID-19.