SiC and GaN Power Devices Market (Updated Version Available)

Wide-bandgap semiconductors (WBG or WBGS) are semiconductor materials which have a relatively large band gap compared to typical semiconductors. Silicon Carbide (SiC) and gallium nitride (GaN) Power Devices are the mainly used Wide-bandgap semiconductors materials.
Infineon is the largest production Cmpany for SiC & GaN Power Devices, with a production value market share nearly 49.01% in 2016.
SiC & GaN Power Devices used in industry including Consumer Electronics, Automotive & Transportation, Industrial Use and Others. Report data showed that 34.05% of the SiC & GaN Power Devices market demand in Industrial Use, 28.76% in Consumer Electronics in 2016.
There are two kinds of SiC & GaN Power Devices, which are SiC and GaN Power Devices. SiC Power Devices is important in the SiC & GaN Power Devices, with a production revenue market share nearly 91.40% in 2016.
Briefly speaking, in the next few years, SiC & GaN Power Devices industry will be a rapid development industry. Sales of SiC & GaN Power Devices have brought a lot of opportunities, there will more companies enter into this industry, especially in developing countries.

The report offers detailed coverage of SiC and GaN Power Devices industry and main market trends. The market research includes historical and forecast market data, demand, application details, price trends, and company shares of the leading SiC and GaN Power Devices by geography. The report splits the market size, by volume and value, on the basis of application type and geography.

The report forecast global SiC and GaN Power Devices market to grow to reach xxx Million USD in 2020 with a CAGR of xx% during the period 2021-2025.

First, this report covers the present status and the future prospects of the global SiC and GaN Power Devices market for 2015-2025.
And in this report, we analyze global market from 5 geographies: Asia-Pacific[China, Southeast Asia, India, Japan, Korea, Western Asia], Europe[Germany, UK, France, Italy, Russia, Spain, Netherlands, Turkey, Switzerland], North America[United States, Canada, Mexico], Middle East & Africa[GCC, North Africa, South Africa], South America[Brazil, Argentina, Columbia, Chile, Peru].

Key Companies
Infineon
Rohm
Mitsubishi
STMicro
Fuji
Toshiba
Microsemi
United Silicon Carbide Inc.
GeneSic
Efficient Power Conversion (EPC)
GaN Systems
VisIC Technologies LTD

At the same time, we classify SiC and GaN Power Devices according to the type, application by geography. More importantly, the report includes major countries market based on the type and application.

Market Segment as follows:
Market by Order Type
GaN
SiC
Market by Application
Consumer Electronics
Automotive & Transportation
Industrial Use
Others

By Region
Asia-Pacific[China, Southeast Asia, India, Japan, Korea, Western Asia]
Europe[Germany, UK, France, Italy, Russia, Spain, Netherlands, Turkey, Switzerland]
North America[United States, Canada, Mexico]
Middle East & Africa[GCC, North Africa, South Africa]
South America[Brazil, Argentina, Columbia, Chile, Peru]

The research provides answers to the following key questions:
• What is the estimated growth rate and market share and size of the SiC and GaN Power Devices market for the forecast period 2021 - 2025?
• What are the driving forces in the SiC and GaN Power Devices market for the forecast period 2021 - 2025?
• Who are the prominent market players and how have they gained a competitive edge over other competitors?
• What are the market trends influencing the progress of the SiC and GaN Power Devices industry worldwide?
• What are the major challenges and threats restricting the progress of the industry?
• What opportunities does the market hold for the prominent market players?