Key Market Overview:
The RF GaN (Radio-Frequency Gallium Nitride) Market exhibited a valuation of USD 1,093.71 Million in 2022, with a notable CAGR of 18.6% projected during the forecast period (2023-2030). The market is poised to reach a significant worth of USD 4,203.78 Million by 2030.
RF GaN or Radio Frequency Gallium Nitride is a type of semiconductor technology that is used in the production of high-frequency electronic devices including amplifiers, transistors, and power devices for radio frequency (RF) applications. The RF GaN devices are widely used in wireless communication systems, radar systems, satellite communication, and other high frequency applications. The ability of the devices to handle high power levels with smaller sizes is considered to be one of the key factors driving the growth of the RF GaN market.
The RF GaN market is driven by the growing need for faster data rates, improved capacity, and enhanced connectivity in wireless communication networks. Further, increasing collaborations of the companies to introduce advanced RF GaN devices is another key factor positively impacting the market growth. For instance, in May 2021, Raytheon Technologies collaborated with Globalfoundries (GF) for developing GaN-on-Si semiconductor equipped with enhanced RF performance. Moreover, factors including advancements in technologies including Internet of Things (IoT), autonomous vehicles, and smart cities are expected to fuel the growth of RF GaN market during the forecast period.
RF GaN (Radio-Frequency Gallium Nitride) Report Coverage
Growing telecommunication sector is driving the market growth
|Report Attributes||Report Details|
|Market Size in 2030 (USD Million)||4,203.78 million|
|CAGR (2023-2030)||18.6 %|
|By Type||GaN-on-Si, GaN-on-SiC, and Others|
|By Product Type||RF Transistors, RF Amplifiers, and Others|
|By Application||Military, Telecom, Satellite Communication, Wired Broadband, Data Centers, Automotive, Marine, and Others|
- Asia-Pacific [China, Southeast Asia, India, Japan, Korea, Western Asia]
- Europe [Germany, UK, France, Italy, Russia, Spain, Netherlands, Turkey]
- North America [United States, Canada, Mexico]
- Middle East & Africa [GCC, North Africa, South Africa]
- South America [Brazil, Argentina, Columbia, Chile, Peru]
|Key Players||Qorvo, Inc, Analog Devices, Inc. Aethercomm, WOLFSPEED, INC., Integra Technologies Inc., MACOM, Mitsubishi Electric Corporation, STMicroelectronics, Raytheon Technologies Corporation, MaxLinear, Microsemi, NXP Semiconductors, Sumitomo Electric Industries, Ltd., Mercury Systems, Inc.|
The RF GaN technology enables higher power output and enhanced efficiency, allowing the telecommunication companies to meet rising demand for data transmission and network capacity. Moreover, surge in adoption of 5G technology is considered to be one of the key factors fueling the demand for the RF GaN devices, as the devices are crucial for achieving desired coverage, data rates and spectral efficiency in 5G networks. Also, factors including increasing demand for faster data rates, enhanced network capacity, small cell deployments, and others are driving the growth of RF GaN market.
Furthermore, factors including the rising penetration of 5G infrastructure along with the increasing adoption of smartphones, and communication devices are the key aspects promoting the growth of the telecommunication sector. For instance, according to Viavi Solutions Inc., 5G services were deployed in 65 countries across the world in 2021, representing a substantial increase of over 20% in comparison to 2020. Therefore, attributing to the factors mentioned above, growing telecommunication sector is boosting the growth of RF GaN market globally.
Presence of alternatives in form of Gallium Arsenide (GaAs) and Silicon LDMOS is restraining the market growth
The silicon LDMOS technology is widely used for RF power applications in lower frequency ranges including broadcast transmitters, cellular base stations, and others. The silicon LDMOS technology offers several benefits over RF GaN technology including good power handling capabilities, cost effectiveness, and mature manufacturing ecosystem. Further, the Gallium Arsenide (GaAs) technology offers high electron mobility as compared to RF GaN technology, resulting in high-speed operation and better linearity. Therefore, owing to the abovementioned factors, presence of substitutes is restraining the growth of RF GaN market.
RF GaN (Radio-Frequency Gallium Nitride) Market Segmentation:
The product type segment is divided into GaN-on-Si, GaN-on-SiC, and others.
The GaN-on-SiC segment accounted for largest market share in terms of revenue in the RF GaN (Radio-Frequency Gallium Nitride) market in 2022. The Gan-on-SiC technology-based devices are equipped with the ability to handle higher power levels and exhibit higher power density, making it suitable for high-power RF devices including amplifiers. For instance, in June 2021 Microchip Technology Inc launched GMICP2731-10 GaN MMIC, a RF GaN amplifier for satellite communication applications. The amplifier is fabricated using the GaN-on-Sic technology and deliver up to 10W power. Additionally, factors including wide bandwidth, robustness, and high reliability among others is driving the adoption of GaN-on-Sic technology.
Further, the GaN-on-Si segment is expected to grow steadily during the forecast period. In the GaN-on-Si technology, the GaN material is deposited on a silicon substrate. The Gan-on-Si is considered to be the most cost-effective technology, which is one of the key factors that is expected to positively impact the adoption of this technology in the upcoming period.
By Product Type
The product type segment is divided into RF transistors, RF amplifiers, and others.
The transistors segment accounted for largest market share in terms of revenue in the RF GaN (Radio-Frequency Gallium Nitride) market in 2022. The transistors manufactured using the RF-GaN technology are characterized with high power density, broad frequency range, and high linearity. Increasing demand for high-power and high-frequency electronic systems is considered to be key factor driving the demand for RF Gan-based transistors.
Further, the amplifier segment is expected to grow steadily during the forecast period. The RF GaN amplifiers are widely used in several applications including wireless communication, radar systems, electronic warfare, satellite communication, and others. Additionally, expansion of aerospace and defense industry worldwide is expected to fuel the demand for RF GaN-based amplifiers in the upcoming period. For instance, in December 2021, CAES launched a high-power GaN-based RF amplifier for providing electronic attack capability to airborne systems, drones, and other military equipment. Moreover, factors including surge in demand for efficient power consumption systems is anticipated to positively impact the market growth during the forecast period.
The application segment is divided into military, telecom, satellite communication, wired broadband, data centers, automotive, marine, and others.
The satellite communication segment accounted for a significant share in the RF GaN (Radio-Frequency Gallium Nitride) market. The RF GaN-based devices including amplifiers and transistors provide high efficiency, higher data rates, and better signal quality in the telecommunication industry. Therefore, several companies are introducing RF GaN-based devices for the telecommunication sector, which is one of the key factors driving the market growth. For instance, in May 2022, STMicroelectronics and MACOM completed production of RF Gan-on-Si prototype. The prototype is produced with an aim to offer potential for the 5G and 6G infrastructures.
Further, the RF Gan-based devices are being widely used in marine radar systems for navigation, collision avoidance, and target detection. Additionally, the RF GAN technology plays a vital role in enabling higher power output and efficient operation in order to ensure robust communication links between the marine vessels and satellite networks. The increasing investments in the marine sector and new shipbuilding projects are the key factors driving the growth of the marine sector. For instance, in 2018, the South African Department of Defence invested USD 225.7 million for the development of three ships. Therefore, owing to the aforementioned above, increasing application of RF GaN technology in the marine sector is expected to positively impact market growth during the forecast period.
The regional segment includes North America, Europe, Asia Pacific, the Middle East and Africa, and Latin America. The North American region is considered to contribute the largest revenue share in the year 2022. Increasing investments to adopt the RF GaN technology in the military sector is considered to be one of the key factors driving the market growth in the region. For instance, in December 2021, Transphorm, Inc. received a contract of USD 0.9 million from the U.S. Defense Advanced Research Projects Agency (DARPA) to manufacture GaN solutions for commercial and DoD radio frequency applications.
Additionally, the Asia-Pacific region is anticipated to witness substantial growth during the forecast period. The rapid pace of urbanization, industrialization, and development in the Asia-Pacific region is creating lucrative opportunities for market growth in the region. Moreover, expanding telecommunication in the Asia Pacific region due to increasing deployment of 5G networks is expected to positively impact the adoption of RF GaN technology in the region during the forecast period.
RF GaN (Radio-Frequency Gallium Nitride) Market Competitive Landscape:
The competitive landscape of the market has been analyzed in the report, along with the detailed profiles of the major players operating in the industry. Further, the surge in Research and Development (R&D), product innovation, various business strategies, and application launches have accelerated the growth of the Global RF GaN (Radio-Frequency Gallium Nitride) Market. Key players in the market include-
• Qorvo, Inc
• Analog Devices, Inc.
• WOLFSPEED, INC.
• Integra Technologies Inc.
• Mitsubishi Electric Corporation
• Raytheon Technologies Corporation
• NXP Semiconductors
• Sumitomo Electric Industries, Ltd.
• Mercury Systems, Inc.
• In June 2021, MaxLinear, Inc. and Wolfspeed launched RF Gan-on-SiC power amplifiers. The amplifiers are designed to increase the wireless capacity of the 5G base stations by increasing data transmission speed and supporting more users.
• In December 2021, CAES launched a high-power GaN-based RF amplifier for providing electronic attack capability to airborne systems, drones, and other military equipment.