The global Gallium Nitride (GaN) Power Devices market size is estimated at xxx million USD with a CAGR xx% from 2015-2019 and is expected to reach xxx Million USD in 2020 with a CAGR xx% from 2020 to 2025. The report begins from overview of Industry Chain structure, and describes industry environment, then analyses market size and forecast of Gallium Nitride (GaN) Power Devices by product, region and application, in addition, this report introduces market competition situation among the vendors and company profile, besides, market price analysis and value chain features are covered in this report.
Product Type Coverage (Market Size & Forecast, Major Company of Product Type etc.):
GaN Power Discrete Devices
GaN Power ICs
GaN Power Modules
Company Coverage (Company Profile, Sales Revenue, Price, Gross Margin, Main Products etc.):
Transphorm Inc
Fujitsu Limited
NXP Semiconductors N.V.
GaN Systems Inc
Texas Instruments
Infineon Technologies AG
Cree Incorporated (Wolfspeed)
OSRAM Opto Semiconductors GmbH
Qorvo, Inc
Application Coverage (Market Size & Forecast, Different Demand Market by Region, Main Consumer Profile etc.):
Consumer Electronics
IT & Telecommunications
Automotive
Aerospace & Defense
Military
Others
Region Coverage (Regional Production, Demand & Forecast by Countries etc.):
North America (U.S., Canada, Mexico)
Europe (Germany, U.K., France, Italy, Russia, Spain etc.)
Asia-Pacific (China, India, Japan, Southeast Asia etc.)
South America (Brazil, Argentina etc.)
Middle East & Africa (Saudi Arabia, South Africa etc.)